| PART |
Description |
Maker |
| SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C
FLUKE-741B 120 REFURBISHED BY NEWARK
KJA 79C 79#22 PIN RECP
128Kx8 EEPROM
PSoC® Mixed-Signal Array
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8）页模式EEPROM
DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8）页模式的EEPROM
IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式的EEPROM
2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8）页模式EEPROM
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| SST29LE020-200-4I-EH |
256K X 8 EEPROM 3V, 200 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
|
| AT28C256-20UM/883 AT28C256F-20UM/883 AT28C256E-20U |
150NS, TSOP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 150 ns, PDSO28
256K (32K x 8) Paged Parallel EEPROM
|
聚兴科技股份有限公司
ATM Electronic, Corp.
ATMEL Corporation
|
| AT28BV256 AT28BV256-25SC AT28BV256-25JI AT28BV256- |
128Kx8 EEPROM 128Kx8 EEPROM
256K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel, Corp.
|
| M27C4002-60XF6TR M27C4002-20B1TR |
256K X 16 UVPROM, 60 ns, CDIP40
256K X 16 OTPROM, 200 ns, PDIP40
|
STMICROELECTRONICS
|
| CAT28C256NA-15T CAT28C256NA-12T CAT28C256NI-15T CA |
256K-Bit Parallel EEPROM
256 kb Parallel EEPROM 32K X 8 EEPROM 5V, 120 ns, PQCC32
|
http://
ON Semiconductor
|
| HN58V256AFP-12 HN58V256AFP-12E HN58V256AT-12 HN58V |
Memory>EEPROM>Parallel EEPROM
256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58V257A)
256k EEPROM (32-kword 隆驴 8-bit) Ready/Busy and RES function (HN58V257A)
|
Renesas Electronics Corporation
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| 28C256TRPDS12 28C256TRPFB12 28C256TRPFB15 28C256TR |
256K EEPROM (32K x 8-bit) - EEPROM
|
Maxwell Technologies
|
| HN58X24256FPIE HN58X24256I HN58X24256TIE HN58X2412 |
Memory>EEPROM>Serial EEPROM
Two-wire serial interface 128k EEPROM (16-kword 】 8-bit) 256k EEPROM (32-kword 】 8-bit)
|
Renesas Electronics Corporation
|
| CAT28LV65H13I-20T |
64 kb CMOS Parallel EEPROM 8K X 8 EEPROM 3V, 200 ns, PDSO28
|
ON Semiconductor
|
